An ultra-low power InAs/AlSb HEMT W-band low-noise amplifier

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 1029-1032

  Hacker, Jonathan B ^a,b   Bergman, Joshua ^a,b   Nagy, Gabor ^b   Sullivan, Gerard ^b   Kadow, C ^c   Lin, H K ^c   Gossard, A C ^c   Rodwell, Mark ^c   Brar, B ^a,b  

^a IEEE   (United States)

^b ROCKWELL SCIENTIFIC COMPANY   (United States)

^c University of California   (United States)

Author keywords

Antimonide based compound semiconductor (ABCS) hEMT; InAs AlSb HFET; Low noise amplifier; Millimeter waves

Indexed keywords

ANTIMONIDE-BASED COMPOUND SEMICONDUCTOR (ABCS) HEMT; INAS/ALSB HFET; LOW NOISE AMPLIFIERS; POWER DISSIPATION;

BROADBAND NETWORKS; FIELD EFFECT TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MICROSTRIP DEVICES; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE;

POWER AMPLIFIERS;

EID: 33749236473     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1516844     Document Type: Conference Paper

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