DC-2 GHz low loss cryogenic InAs/AlSb HEMT switch

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2009, Pages 449-452

  Ma, Bob Yintat ^a   Bergman, Joshua ^a   Hacker, Jonathan B ^a   Sullivan, Gerard ^a   Sailer, Alan ^a   Brar, B ^a  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

ABCS; Antimonide based compound semiconductor; HEMT; InAs AlSb HFET; MMIC; Single pole double pole; SPDT; Switch

Indexed keywords

ABCS; ANTIMONIDE BASED COMPOUND SEMICONDUCTORS; ANTIMONIDE-BASED COMPOUND SEMICONDUCTOR; CRYOGENIC TEMPERATURES; HEMT; HEMT SWITCH; HIGH ISOLATION; LOW INSERTION LOSS; LOW LOSS; RF POWER APPLICATIONS; SINGLE-POLE DOUBLE-THROW SWITCHES;

CRYOGENICS; INSULATING MATERIALS; MICROWAVE CIRCUITS; MICROWAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POLES; SEMICONDUCTOR SWITCHES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77949938458     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2009.5165730     Document Type: Conference Paper

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