Tunneling-assisted Poole-Frenkel conduction mechanism in Hf O2 thin films

Journal of Applied Physics

Volumn 98, Issue 11, 2005, Pages

  Jeong, Doo Seok ^a   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HF O2 LAYER; INSULATOR LAYERS; METAL/INSULATOR JUNCTION; TUNNELING-ASSISTED POOLE-FRENKEL (TAPF) MECHANISM;

CURRENT DENSITY; ELECTRIC CONDUCTANCE; ELECTRIC FIELDS; ELECTRODES; ELECTRON TRAPS; ELECTRON TUNNELING; HAFNIUM; LEAKAGE CURRENTS;

THIN FILMS;

EID: 29144521437     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2135895     Document Type: Article

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