Charge-transport characteristics in bistable resistive Poly(N-Vinylcarbazole) films

IEEE Electron Device Letters

Volumn 27, Issue 6, 2006, Pages 451-453

  Lai, Yi Sheng ^a   Tu, Chia Hsun ^a   Kwong, Dim Lee ^a   Chen, J S ^b  

^a The University of Texas at Austin   (United States)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Charge transport; Poly(N vinylcarbazole) (PVK); Resistance random access memory (RRAM)

Indexed keywords

CHARGE TRANSFER; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; RANDOM ACCESS STORAGE;

BISTABLE RESISTIVE FILMS; CURRENT RATIO; OHMIC CONDUCTION; POLY(N-VINYLCARBAZOLE) (PVK); RESISTANCE RANDOM ACCESS MEMORY (RRAM);

CONDUCTIVE FILMS;

EID: 33744751506     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.874762     Document Type: Article

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