Properties of GaP(001) surfaces treated in aqueous HF solutions

Journal of Applied Physics

Volumn 101, Issue 11, 2007, Pages

  Morota, Hiroaki ^a   Adachi, Sadao ^a  

^a GUNMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; PHOTOLUMINESCENCE; SOLUTIONS; SPECTROSCOPIC ELLIPSOMETRY; WETTING; X RAY PHOTOELECTRON SPECTROSCOPY;

ALKALINE CLEANED SURFACES; NATIVE OXIDE FILMS; WETTABILITY MEASUREMENTS;

GALLIUM PHOSPHIDE;

EID: 34250622518     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2737781     Document Type: Article

References (39)

1. S. I. Ingrey, in Handbook of Compound Semiconductors, edited by, P. H. Holloway, and, G. E. McGuire, (Noyes, NJ, 1995).
2. S. Osakabe and S. Adachi, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.36.7119 36, 7119 (1997) (and references therein.).
3. D. Kikuchi and S. Adachi, Mater. Sci. Eng., B 0921-5107 10.1016/S0921-5107(00)00430-X 76, 133 (2000) (and references therein).
4. Z. H. Lu, F. Chatenoud, M. M. Dion, M. J. Graham, H. E. Ruda, I. Koutzarov, Q. Lin, C. E. J. Mitchell, I. G. Hill, and A. B. McLean, Appl. Phys. Lett. 0003-6951 10.1063/1.115198 67, 670 (1995).
5. S. Osakabe and S. Adachi, J. Electrochem. Soc. 0013-4651 10.1149/1.1837397 144, 290 (1997).
6. P. Schmuki, G. I. Sproule, J. A. Bardwell, Z. H. Lu, and M. J. Graham, J. Appl. Phys. 0021-8979 10.1063/1.361524 79, 7303 (1996).
7. Z. H. Lu, T. Tyliszczak, and A. P. Hitchcock, Phys. Rev. B 0163-1829 10.1103/PhysRevB.58.13820 58, 13820 (1998).
8. O. E. Tereshchenko, S. I. Chikichev, and A. S. Terekhov, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.581926 17, 2655 (1999).
9. S. Adachi and D. Kikuchi, J. Electrochem. Soc. 0013-4651 10.1149/1.1394112 147, 4618 (2000).
10. Z. Liu, Y. Sun, F. Machuca, P. Pianetta, W. E. Spicer, and R. F. W. Pease, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.1532737 21, 212 (2003).
11. Z. Liu, Y. Sun, F. Machuca, P. Pianetta, W. E. Spicer, and R. F. W. Pease, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1593644 21, 1953 (2003).
12. V. L. Alperovich, O. E. Tereshchenko, N. S. Rudaya, D. V. Sheglov, A. V. Latyshev, and A. S. Terekhov, Appl. Surf. Sci. 235, 249 (2004). 0169-4332
13. T. Mayer, M. V. Lebedev, R. Hunger, and W. Jaegermann, J. Phys. Chem. B 110, 2293 (2006). 1520-6106
14. D. Kikuchi, Y. Matsui, and S. Adachi, J. Electrochem. Soc. 0013-4651 10.1149/1.1393469 147, 1973 (2000).
15. O. Pluchery, Y. J. Chabal, and R. L. Opila, J. Appl. Phys. 0021-8979 10.1063/1.1596719 94, 2707 (2003).
16. Y. Sun, Z. Liu, F. Machuca, P. Pianetta, and W. E. Spicer, J. Appl. Phys. 0021-8979 10.1063/1.1935745 97, 124902 (2005).
17. K. Tomioka and S. Adachi, J. Electrochem. Soc. 0013-4651 10.1149/1.1854614 152, G173 (2005).
18. H. Morota and S. Adachi, J. Appl. Phys. 0021-8979 10.1063/1.2337386 100, 054904 (2006).
19. A. R. Clawson, Mater. Sci. Eng., R 31, 1 (2001).
20. R. M. A. Azzam and N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, Amsterdam, 1977).
21. G. E. Jellison, Jr., Opt. Mater. 0925-3467 10.1016/S0925-3467(01)00154-9 1, 151 (1992).
22. S. Adachi, Optical Constants of Crystalline and Amorphous Semiconductors: Numerical Data and Graphical Information (Kluwer Academic, Boston, 1999).
23. S. Zollner, M. Garriga, J. Kircher, J. Humlíček, M. Cardona, and G. Neuhold, Phys. Rev. B 0163-1829 10.1103/PhysRevB.48.7915 48, 7915 (1993).
24. S. Adachi, Properties of Group-IV, III-V and II-VI Semiconductors (Wiley, Chichester, 2005).
25. D. E. Aspnes, B. Schwartz, A. A. Studna, L. Derick, and L. A. Koszi, J. Appl. Phys. 0021-8979 10.1063/1.324200 48, 3510 (1977).
26. S. Zollner, Appl. Phys. Lett. 0003-6951 10.1063/1.110469 63, 2523 (1993).
27. M. Erman, J. B. Theeten, P. Chambon, S. M. Kelso, and D. E. Aspnes, J. Appl. Phys. 0021-8979 10.1063/1.333785 56, 2664 (1984).
28. C. C. Surdu-Bob, S. O. Saied, and J. L. Sullivan, Appl. Surf. Sci. 183, 126 (2001). 0169-4332
29. N. Tomita and S. Adachi, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.40.6705 40, 6705 (2001).
30. G. Gergely, M. Menyhard, S. Gurban, Z. Benedek, C. Daroczi, V. Rakovics, J. Tóth, D. Varga, M. Krawczyk, and A. Jablonski, Surf. Interface Anal. 0142-2421 10.1002/1096-9918(200008)30:1<195::AID-SIA803>3.0.CO;2-F 30, 195 (2000).
31. L. Li, H. Bender, G. Zou, P. W. Mertens, M. A. Meuris, and M. M. Heyns, J. Electrochem. Soc. 0013-4651 10.1149/1.1836414 143, 233 (1996).
32. I. -M. Lee and C. G. Takoudis, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.580860 15, 3154 (1997).
33. K. Matsushita, S. Miyazaki, S. Okuyama, and Y. Kumagai, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.33.4576 33, 4576 (1994).
34. Y. Bäcklund, K. Hermansson, and L. Smith, J. Electrochem. Soc. 0013-4651 10.1149/1.2221218 139, 2299 (1992).
35. M. Grundner and H. Jacob, Appl. Phys. A 0947-8396 10.1007/BF00616822 39, 73 (1986).
36. K. Mettler, Appl. Phys. 0340-3793 10.1007/BF00900071 12, 75 (1977).
37. R. E. Hollingsworth and J. R. Sites, J. Appl. Phys. 0021-8979 10.1063/1.329891 53, 5357 (1982).
38. W. S. Hobson and A. B. Ellis, J. Appl. Phys. 0021-8979 10.1063/1.331772 54, 5956 (1983).
39. A. A. Burk, Jr., P. B. Johnson, W. S. Hobson, and A. B. Ellis, J. Appl. Phys. 0021-8979 10.1063/1.336474 59, 1621 (1986).