Bilayer-by-bilayer etching of 6H-GaN(0 0 0 1) with Cl

Surface Science

Volumn 561, Issue 2-3, 2004, Pages

  Kuwano, S ^a   Xue, Q Z ^a   Asano, Y ^a   Fujikawa, Y ^a   Xue, Q K ^a,b   Nakayama, Koji S ^a,c   Nagao, T ^a   Sakurai, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b INSTITUTE OF PHYSICS   (China)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Chlorine; Etching; Gallium nitride; Scanning tunneling microscopy; Surface structure, morphology, roughness, and topography; Thermal desorption

Indexed keywords

CHLORINE; CRYSTAL ATOMIC STRUCTURE; DESORPTION; ETCHING; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SURFACE ROUGHNESS; SURFACE TOPOGRAPHY;

ATOMIC LEVELS; BILAYERS; SMOOTH STEPS; THERMAL DESORPTION;

GALLIUM NITRIDE;

EID: 3042741780     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.05.098     Document Type: Article

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