SCOPUS 정보 검색 플랫폼

Volumn 46, Issue 4-7, 2007, Pages

Fabrication of a-plane GaN substrate using the Sr-Na flux liquid phase epitaxy technique

Author keywords

A plane; GaN; Liquid phase epitaxy; Non polar; Substrate

Indexed keywords

CRYSTAL GROWTH; LIQUID PHASE EPITAXY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SINGLE CRYSTALS; X RAY DIFFRACTION;

FLUX SYSTEM; NA FLUX METHOD; PRISMATIC CRYSTALS;

GALLIUM NITRIDE;

EID: 34547879645 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.L103 Document Type: Article

Times cited : (22)

References (12)

1
- 18244377392
- B. A. Haskell, A Chakraborty, F. Wu, H. Sasano, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura: J. Electron. Mater. 34 (2005) 357.
- (2005) J. Electron. Mater , vol.34 , pp. 357
- Haskell, B.A.¹ Chakraborty, A.² Wu, F.³ Sasano, H.⁴ Fini, P.T.⁵ DenBaars, S.P.⁶ Speck, J.S.⁷ Nakamura, S.⁸

2
- 17444408562
- A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra: Jpn. J. Appl. Phys. 44 (2005) L173.
- (2005) Jpn. J. Appl. Phys , vol.44
- Chakraborty, A.¹ Haskell, B.A.² Keller, S.³ Speck, J.S.⁴ DenBaars, S.P.⁵ Nakamura, S.⁶ Mishra, U.K.⁷

3
- 33645029832
- X. Ni, Y. Fu, Y. T. Moon, N. Biyikli, and H. Morkoc: J. Cryst. Growth 290 (2006) 166.
- (2006) J. Cryst. Growth , vol.290 , pp. 166
- Ni, X.¹ Fu, Y.² Moon, Y.T.³ Biyikli, N.⁴ Morkoc, H.⁵

4
- 27844537905
- P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel: J. Appl. Phys. 98 (2005) 93519.
- (2005) J. Appl. Phys , vol.98 , pp. 93519
- Paskov, P.P.¹ Schifano, R.² Monemar, B.³ Paskova, T.⁴ Figge, S.⁵ Hommel, D.⁶

5
- 32444439030
- B. Imer, F. Wu, S. P. DenBaars, and J. S. Speck: Appl. Phys. Lett. 88 (2006) 61908.
- (2006) Appl. Phys. Lett , vol.88 , pp. 61908
- Imer, B.¹ Wu, F.² DenBaars, S.P.³ Speck, J.S.⁴

6
- 0037966868
- F. Kawamura, T. Iwahashi, K. Omae, M. Morishita, M. Yoshimura, Y. Mori, and T. Sasaki: Jpn. J. Appl. Phys. 42 (2003) L4.
- (2003) Jpn. J. Appl. Phys , vol.42
- Kawamura, F.¹ Iwahashi, T.² Omae, K.³ Morishita, M.⁴ Yoshimura, M.⁵ Mori, Y.⁶ Sasaki, T.⁷

7
- 0042884433
- F. Kawamura, H. Umeda, M. Kawahara, M. Morishita, M. Yoshimura, Y. Mori, T. Sasaki, H. Okada, K. Arakawa, and H. Mori: Jpn. J. Appl. Phys. 42 (2003) L729.
- (2003) Jpn. J. Appl. Phys , vol.42
- Kawamura, F.¹ Umeda, H.² Kawahara, M.³ Morishita, M.⁴ Yoshimura, M.⁵ Mori, Y.⁶ Sasaki, T.⁷ Okada, H.⁸ Arakawa, K.⁹ Mori, H.¹⁰

8
- 0041753936
- F. Kawamura, M. Morishita, T. Iwahashi, M. Yoshimura, Y. Mori, and T. Sasaki: Jpn. J. Appl. Phys. 41 (2002) L1440.
- (2002) Jpn. J. Appl. Phys , vol.41
- Kawamura, F.¹ Morishita, M.² Iwahashi, T.³ Yoshimura, M.⁴ Mori, Y.⁵ Sasaki, T.⁶

9
- 0042266869
- M. Morishita, F. Kawamura, T. Iwahashi, M. Yoshimura, Y. Mori, and T. Sasaki: Jpn. J. Appl. Phys. 42 (2003) L565.
- (2003) Jpn. J. Appl. Phys , vol.42
- Morishita, M.¹ Kawamura, F.² Iwahashi, T.³ Yoshimura, M.⁴ Mori, Y.⁵ Sasaki, T.⁶

10
- 25144486783
- M. Morishita, F. Kawamura, M. Kawahara, M. Yoshimura, Y. Mori, and T. Sasaki: J. Cryst. Growth 284 (2005) 91.
- (2005) J. Cryst. Growth , vol.284 , pp. 91
- Morishita, M.¹ Kawamura, F.² Kawahara, M.³ Yoshimura, M.⁴ Mori, Y.⁵ Sasaki, T.⁶

11
- 0345415190
- M. Aoki, H, Yamane, M. Shimada, S. Sarayama, H. Iwata, and F. J. Disalvo: Jpn. J. Appl. Phys. 42 (2003) 5445.
- (2003) Jpn. J. Appl. Phys , vol.42 , pp. 5445
- Aoki, M.¹ Yamane, H.² Shimada, M.³ Sarayama, S.⁴ Iwata, H.⁵ Disalvo, F.J.⁶

12
- 33749334332
- J. K. Jian, G. Wang, C. Wang, W. X. Yuan, and X. L. Chen: J. Cryst. Growth 291 (2006) 72.
- (2006) J. Cryst. Growth , vol.291 , pp. 72
- Jian, J.K.¹ Wang, G.² Wang, C.³ Yuan, W.X.⁴ Chen, X.L.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.