Local oxide growth on the n-GaAs surface studied by small area XPS

Surface Science

Volumn 433, Issue , 1999, Pages 131-135

  Gerard I ^a   Debiemme Chouvy, C ^a   Vigneron, J ^a   Bellenger, F ^a   Kostelitz, S ^a   Etcheberry, A ^a  

^a LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CAPACITANCE MEASUREMENT; DISSOLUTION; ELECTROCHEMISTRY; FILM GROWTH; LASER BEAM EFFECTS; OXIDES; PH EFFECTS; PHOTOCURRENTS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTROCHEMICAL METHOD; EX SITU SURFACE ANALYSIS; GALLIUM OXIDE; IN SITU ELECTROCHEMISTRY; LOCAL OXIDE GROWTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033328461     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00071-0     Document Type: Article

References (8)

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