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Journal of Chemical Physics

Volumn 132, Issue 24, 2010, Pages

Initiation of a passivated interface between hafnium oxide and in (Ga) As (0 0 1) -(4×2)

(5) Clemens, Jonathon B a Bishop, Sarah R a Lee, Joon Sung a Kummel, Andrew C a Droopad, Ravi b

a UNIVERSITY OF CALIFORNIA (United States)

b Texas State University San Marcos (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BEAM DEPOSITION; CHEMISORPTION SITES; CONDUCTION-BAND MINIMUM; ELECTRON BEAM DEPOSITIONS; FERMI LEVEL PINNING; GROUP III; INAS; LOW DENSITY; P-TYPE; SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY; SEMI-CONDUCTOR SURFACES; SUBSTRATE ATOM; VALENCE-BAND MAXIMUMS;

CHEMICAL MODIFICATION; CHEMISORPTION; DANGLING BONDS; ELECTRON BEAMS; ELECTRON MOBILITY; FERMI LEVEL; FERMIONS; HAFNIUM; HAFNIUM OXIDES; OXIDATION; OXIDES; SCANNING TUNNELING MICROSCOPY;

SEMICONDUCTING INDIUM;

EID: 77954195474 PISSN: 00219606 EISSN: None Source Type: Journal
DOI: 10.1063/1.3427584 Document Type: Article

Times cited : (10)

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