Structural and electronic properties of group III rich In 0.53Ga0.47As(001)

Surface Science

Volumn 604, Issue 19-20, 2010, Pages 1757-1766

  Shen, Jian ^a,b   Clemens, Jonathon B ^b   Chagarov, Evgueni A ^b   Feldwinn, Darby L ^b   Melitz, Wilhelm ^a,b   Song, Tao ^b   Bishop, Sarah R ^b   Kummel, Andrew C ^b   Droopad, Ravi ^c  

^a Materials Science and Engineering Program   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c TEXAS STATE UNIVERSITY   (United States)

Author keywords

Bader charge; Density functional calculations; Indium gallium arsenide; Scanning tunneling microscopy; Scanning tunneling spectroscopies; Semiconducting surfaces; Surface relaxation and reconstruction

Indexed keywords

ATOMS; DEFECT DENSITY; DIMERS; ELECTRONIC PROPERTIES; GALLIUM ARSENIDE; IMAGE PROCESSING; IMAGE RECONSTRUCTION; INDIUM; MOLECULAR DYNAMICS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SURFACE DEFECTS; SURFACE RECONSTRUCTION; TEMPERATURE;

BADER CHARGE; INDIUM GALLIUM ARSENIDE; SCANNING TUNNELING SPECTROSCOPY; SEMICONDUCTING SURFACES; SURFACE RELAXATION AND RECONSTRUCTION;

DENSITY FUNCTIONAL THEORY;

EID: 77958031657     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2010.07.001     Document Type: Article

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