Initial stages of the autocatalytic oxidation of the InAs(0 0 1)-(4 × 2)/c(8 × 2) surface by molecular oxygen

Surface Science

Volumn 603, Issue 14, 2009, Pages 2230-2239

  Clemens, Jonathon B ^a   Bishop, Sarah R ^a   Feldwinn, Darby L ^a   Droopad, Ravi ^b   Kummel, Andrew C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Chemisorption; Density functional calculations; Indium arsenide; Monte Carlo simulations; Oxidation; Oxygen; Scanning tunneling microscopy; Semi conducting surfaces

Indexed keywords

AUTOCATALYTIC; AUTOCATALYTIC OXIDATION; DENSITY FUNCTIONAL CALCULATIONS; DISSOCIATIVE CHEMISORPTION; INAS; INITIAL STAGES; MONTE CARLO SIMULATIONS; OXIDE GROWTH; OXYGEN CHEMISORPTION; SCANNING TUNNELING MICROSCOPY (STM); SEMI CONDUCTING SURFACES; SITE DISTRIBUTION; STICKING PROBABILITY; UNIT CELL LENGTH;

ATOMIC LAYER DEPOSITION; ATOMS; CHEMISORPTION; CRYSTAL GROWTH; DENSITY FUNCTIONAL THEORY; DISSOCIATION; INDIUM ARSENIDE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MONTE CARLO METHODS; OPTICAL RESOLVING POWER; OXIDATION; POISSON DISTRIBUTION; SCANNING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM;

MOLECULAR OXYGEN;

EID: 66249112864     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2009.04.036     Document Type: Article

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