Thin HfO2 films grown on Si(100) by atomic oxygen assisted molecular beam epitaxy

Applied Physics Letters

Volumn 85, Issue 1, 2004, Pages 85-87

  Yan, Z J ^a,b   Xu, R ^b   Wang, Y Y ^a   Chen, S ^b   Fan, Y L ^b   Jiang, Z M ^b  

^a LANZHOU UNIVERSITY   (China)

^b FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; DIELECTRIC FILMS; FILM GROWTH; HAFNIUM COMPOUNDS; INTEGRATED CIRCUITS; ION BEAM ASSISTED DEPOSITION; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; MOS DEVICES; OXYGEN; THERMODYNAMIC STABILITY;

ATOMIC LAYER DEPOSITION (ALD); ATOMIC OXYGEN; SUBSTRATE SURFACE;

ULTRATHIN FILMS;

EID: 3242717021     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1767604     Document Type: Article

References (16)

1. K. Onishi, L. Kang, R. Choi, E. Dhatmarajan, S. Gopalan, Y. J. Jeon, C. Seok Kang, B. Hun Lee, R. Nieh, and J. C. Lee, VLSI Tech. Dig. 2001, 131 (2001).
2. J. Robertson and J. Vac. Sci. Technol. B 18, 1785 (2000).
3. Y. Hoshino, Y. Kido, K. Yamamoto, S. Hayashi, and M. Niwa, Appl. Phys. Lett. 81, 2650 (2002).
4. M. Gutowski, J. E. Jaffe, C.- L. Liu, M. Stoker, R. I. Hegde, R. S. Rai, and P. J. Tobin, Appl. Phys. Lett. 80, 1897 (2002).
5. M. Alvisia, S. Scaglioneb, S. Martellic, A. Rizzord, and L. Vasanelli, Thin Solid Films 354, 19 (1999).
6. K. Kukli, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskela, Thin Solid Films 416, 72 (2002).
7. H. Harris,K. Choi, N. Mehta, A. Chandolu, N. Biswas, G. Kipshidze, S. Nikishin, S. Gangopadhyay, and H. Temkin, Appl. Phys. Lett. 81, 1065 (2002).
8. S. A. Campbell, T. Z. Ma, R. Smith, W. L. Gladfelter, and F. Chen, Microelectron. Eng. 59, 361 (2001).
9. J. Sundqvist, A. Harsta, J. Aarik, K. Kukli, and A. Aidla, Thin Solid Films 427, 147 (2003).
10. O. Renault, D. Samour,D. Rouchon, Ph. Holliger, A.-M. Papon, D. Blin, and S. Marthon, Thin Solid Films 428, 190 (2003).
11. H. Kim, P. C. McIntyre, and K. C. Saraswat, Appl. Phys. Lett. 82, 106 (2003).
12. P. S. Lysaght, B. Foran, G. Bersuker, P. J. Chen, R. W. Murto, and H. R. Huff, Appl. Phys. Lett. 82, 1266 (2003).
13. S. Banerjee, Y. J. Park, D. R. Lee, Y. H. Jeong, K.-B. Lee, S. B. Yoon, B. H. Jo, H. M. Choi, and W.-J. Cho, Appl. Phys. Lett. 72, 433 (1998).
14. N. Miyata, M. Ichikawa, T. Nabatame, T. Horikawa, and A. Toriumi, Jpn. J. Appl. Phys., Part 2 42, L138 (2003).
15. www.cerac.com/pubs/proddata/hfo2.htm, CERAC Inc.
16. J. F. Conley, Jr.,Y. Ono, R. Solanki, G. Stecker, and W. Zhuang, Appl. Phys. Lett. 82, 1350 (2003).