Growth of an InGaAs/GaAsSb tunnel junction for an InP-based low band gap tandem solar cell

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 777-781

  Seidel, U ^a   Schimper, H J ^a   Kollonitsch, Z ^a   Moller K ^a   Schwarzburg, K ^a   Hannappel, T ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

A1. Interfaces, Surface structure; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III V materials; B3. Heterojunction semiconductor devices, Solar cells

Indexed keywords

ANNEALING; ENERGY GAP; HETEROJUNCTIONS; INTERFACES (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SOLAR CELLS; SURFACE STRUCTURE; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

BARRIER LAYERS; GROWTH TEMPERATURE; REFLECTANCE DIFFERENCE SPECTROSCOPY (RDS); SURFACE RECONSTRUCTIONS;

TUNNEL JUNCTIONS;

EID: 33846422367     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.132     Document Type: Article

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