메뉴 건너뛰기




Volumn 255, Issue 3, 2008, Pages 722-724

Electronic surface states on the MOVPE-prepared InGa-terminated InGaAs(1 0 0) (4 × 2)/c(8 × 2) surface

Author keywords

III V Semiconductors; InGaAs; Photoelectron spectroscopy; Surface reconstruction; Surface state

Indexed keywords

GALLIUM COMPOUNDS; III-V SEMICONDUCTORS; LIGHT SOURCES; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; PHOTONS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; SURFACE RECONSTRUCTION; SURFACE STATES; SYNCHROTRON RADIATION;

EID: 55649112047     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.07.017     Document Type: Article
Times cited : (5)

References (13)
  • 4
    • 55649090853 scopus 로고    scopus 로고
    • T. Hannappel, F. Willig, German Patent DE 19 837 851, Germany.
    • T. Hannappel, F. Willig, German Patent DE 19 837 851, Germany.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.