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Volumn 255, Issue 3, 2008, Pages 722-724
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Electronic surface states on the MOVPE-prepared InGa-terminated InGaAs(1 0 0) (4 × 2)/c(8 × 2) surface
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Author keywords
III V Semiconductors; InGaAs; Photoelectron spectroscopy; Surface reconstruction; Surface state
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Indexed keywords
GALLIUM COMPOUNDS;
III-V SEMICONDUCTORS;
LIGHT SOURCES;
PHOTOELECTRON SPECTROSCOPY;
PHOTOELECTRONS;
PHOTONS;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING INDIUM;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR ALLOYS;
SURFACE RECONSTRUCTION;
SURFACE STATES;
SYNCHROTRON RADIATION;
ELECTRONIC SURFACE STATE;
INGAAS;
PHOTOELECTRON SPECTRUM;
PHOTON ENERGY;
UV PHOTOELECTRON SPECTROSCOPY;
GALLIUM ALLOYS;
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EID: 55649112047
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2008.07.017 Document Type: Article |
Times cited : (5)
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References (13)
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