Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition

Applied Physics Letters

Volumn 92, Issue 11, 2008, Pages

  Ok, Injo ^a   Kim, H ^a   Zhang, M ^a   Zhu, F ^a   Park, S ^a   Yum, J ^a   Zhao, H ^a   Garcia, Domingo ^a,b   Majhi, Prashant ^a,b   Goel, N ^a   Tsai, W ^a,c   Gaspe, C K ^a,d   Santos, M B ^a,d   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

^c INTEL CORPORATION   (United States)

^d UNIVERSITY OF OKLAHOMA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; HAFNIUM COMPOUNDS; HYSTERESIS; MOS DEVICES; THICKNESS CONTROL; VOLTAGE CONTROL;

CAPACITANCE VOLTAGE; FREQUENCY DISPERSION; SEMICONDUCTOR CAPACITORS;

SUBSTRATES;

EID: 41049106066     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2844879     Document Type: Article

References (20)

1. Z. Shi, D. Onsongo, K. Onishi, J. C. Lee, and S. K. Banerjee, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2002.807020 24, 34 (2003).
2. V. Narayanan, A. Callegari, F. R. McFeely, K. Nakamura, P. Jamison, S. Zafar, E. Cartier, A. Steegen, V. Ku, P. Nguyen, K. Milkove, C. Cabral, M. Gribelyuk, C. Wajda, Y. Kawano, D. Lacey, Y. Li, E. Sikorski, F. Duch, H. Ng, C. Wann, R. Jammy, M. Ieong, and G. Shahidi, Tech. Dig. VLSI Symp. 2004, 192.
3. M. Passlack, J. K. Abrokwah, R. Droopad, Y. Zhiyi, C. Overgaard, I. Y. Sang, M. Hale, J. Sexton, and A. C. Kummel, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2002.802591 23, 508 (2002).
4. G. G. Fountain, S. V. Hattangady, D. J. Vitkavage, R. A. Rudder, and R. J. Markunas, Electron. Lett. ELLEAK 0013-5194 10.1049/el:19880771 24, 1134 (1988).
5. S. Tiwari, S. L. Wright, and J. Batey, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.6954 9, 488 (1988).
6. H. Hasegawa, M. Akazawa, H. Ishii, and K.-I. Matsuzaki, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.584616 7, 870 (1989).
7. A. Callegari, D. K. Sandana, D. A. Buchanan, A. Paccagnella, E. D. Marshall, M. A. Tischler, and M. Norcott, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.104820 58, 2540 (1991).
8. D. S. L. Mui, H. Liaw, A. L. Demirel, S. Strite, and H. Morkoc, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.105853 59, 2847 (1991).
9. D. S. L. Mui, D. Biswas, J. Reed, A. L. Demirel, S. Strite, and H. Morkoc, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.106950 60, 2511 (1992).
10. M. Tao, A. E. Botchkarev, D. Park, J. Reed, S. Jay Chey, J. E. Van Nostrand, D. G. Cahill, and H. Morkoc, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.359495 77, 4113 (1995).
11. I. Ok, H.-S. Kim, M. Zhang, C.-Y. Kang, S. J. Rhee, C. Choi, S. A. Krishnan, T. Lee, F. Zhu, G. Thareja, and J. C. Lee, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2006.870243 27, 145 (2006).
12. I. Ok, H. Kim, M. Zhang, T. Lee, F. Zhu, G. Thareja, L. Yu, S. Koveshnikov, W. Tsai, V. Tokranov, M. Yakimov, S. Oktyabrsky, and J. C. Lee, IEEE Device Research Conference, 2006 (unpublished), pp. 45-46.
13. I. Ok, H. Kim, M. Zhang, T. Lee, F. Zhu, L. Yu, S. Koveshnikov, W. Tsai, V. Tokranov, M. Yakimov, S. Oktyabrsky, and J. C. Lee, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2006, 829.
14. S. Suzuki, S. Kodama, H. Tomozawa, and H. Hasegawa, Seventh International Conference on Indium Phosphide and Related Materials, 9-13 May 1995 (unpublished), pp. 436-439.
15. Y. Xuan, H. C. Lin, and P. D. Ye, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2217258 88, 263518 (2006).
16. F. Ren, J. M. Kuo, M. Hong, W. S. Hobson, J. R. Lothian, J. Lin, H. S. Tsai, J. P. Mannaerts, J. Kwo, S. N. G. Chu, Y. K. Chen, and A. Y. Cho, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.704409 19, 309 (1998).
17. I. Ok, H. Kim, M. Zhang, F. Zhu, S. Park, J. Yum, S. Koveshnikov, W. Tsai1, V. Tokranov, M. Yakimov, S. Oktyabrsky, and J. C. Lee, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.2746348 25, 1491 (2007).
18. B. H. Lee, L. Kang, W.-J. Qi, R. Nieh, Y. Jeon, K. Onishi, and J. C. Lee, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 1999, 133.
19. J.-K. Yang, M.-G. Kang, and H.-H. Park, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1785851 96, 4811 (2004).
20. T. Yang, Y. Xuan, D. Zemlyanov, T. Shen, Y. Q. Wu, J. M. Woodall, P. D. Ye, F. S. Aguirre-Tostado, M. Milojevic, S. McDonnell, and R. M. Wallace, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2798499 91, 142122 (2007).