Mobility enhancement due to volume inversion in (110)-oriented ultra-thin body double-gate nMOSFETs with body thickness less than 5 nm

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 729-732

  Tsutsui, Gen ^a   Saitoh, Masumi ^a   Saraya, Takuya ^a   Nagumo, Toshiharu ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; QUANTUM CONFINEMENT; SCATTERING; SURFACE ROUGHNESS;

MOBILITY ENHANCEMENT; ULTRA-THIN BODY; VOLUME INVERSION;

MOSFET DEVICES;

EID: 33847733858     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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