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Volumn 4, Issue 1-2, 2005, Pages 71-74

On the electrostatics of double-gate and cylindrical nanowire MOSFETs

Author keywords

Cylindrical nanowire MOSFETs; Double gate MOSFETs; Quantum effects; Semiconductor device modeling

Indexed keywords


EID: 25144444376     PISSN: 15698025     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10825-005-7110-0     Document Type: Article
Times cited : (13)

References (9)
  • 1
    • 0036923438 scopus 로고    scopus 로고
    • "FinFET scaling to 10 nm gate lenght"
    • B. Yu et al., "FinFET scaling to 10 nm gate lenght," IEDM 2002 Tech. Digest, 251-254 (2002).
    • (2002) IEDM 2002 Tech. Digest , pp. 251-254
    • Yu, B.1
  • 2
    • 84907707336 scopus 로고    scopus 로고
    • "Corner effect in double and triple gate FinFETs"
    • A. Burenkov et al., "Corner effect in double and triple gate FinFETs," ESSDERC 2003 Proceedings, 135-138 (2003).
    • (2003) ESSDERC 2003 Proceedings , pp. 135-138
    • Burenkov, A.1
  • 3
    • 0034453443 scopus 로고    scopus 로고
    • "50 nm Vertical Replacement-Gate (VRG) pMOSFETs"
    • S.-H. Oh et al., "50 nm Vertical Replacement-Gate (VRG) pMOSFETs," IEDM 2000 Tech. Digest, 65-68 (2000).
    • (2000) IEDM 2000 Tech. Digest , pp. 65-68
    • Oh, S.-H.1
  • 4
    • 0031079417 scopus 로고    scopus 로고
    • "Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's"
    • 10.1109/55.553049
    • C. Auth and J. Plummer, quot;Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's," IEEE Electron Device Letters, 18, 74-76 (1997). 10.1109/55.553049
    • (1997) IEEE Electron Device Letters , vol.18 , pp. 74-76
    • Auth, C.1    Plummer, J.2
  • 5
    • 0034258881 scopus 로고    scopus 로고
    • "Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs"
    • 10.1109/55.863106
    • S.-H. Oh et al., "Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs," IEEE Electron Device Letters, 21, 445-447 (2000). 10.1109/ 55.863106
    • (2000) IEEE Electron Device Letters , vol.21 , pp. 445-447
    • Oh, S.-H.1
  • 6
    • 13044280799 scopus 로고    scopus 로고
    • "Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures"
    • 10.1063/1.370171
    • E. Pokatilov et al., "Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures," J. Appl. Phys., 85, 6625 (1999). 10.1063/1.370171
    • (1999) J. Appl. Phys. , vol.85 , pp. 6625
    • Pokatilov, E.1
  • 7
    • 17644426064 scopus 로고    scopus 로고
    • "A New Approach to the Self-Consistent Solution of the Schrodie;dinger-Poisson Equations in Nanowire MOSFETs"
    • E. Gnani et al., "A New Approach to the Self-Consistent Solution of the Schrödinger-Poisson Equations in Nanowire MOSFETs," ESSDERC 2004 Proceedings, 177-180, (2004).
    • (2004) ESSDERC 2004 Proceedings , pp. 177-180
    • Gnani, E.1
  • 8
    • 0001500805 scopus 로고    scopus 로고
    • "Iteration scheme for the solution of the two-dimensional Schrödinger-Poisson equations in quantum structures"
    • 10.1063/1.365396
    • A. Trellakis et al., "Iteration scheme for the solution of the two-dimensional Schrödinger-Poisson equations in quantum structures," J. Appl. Phys., 85, 7880-7884 (1997). 10.1063/1.365396
    • (1997) J. Appl. Phys. , vol.85 , pp. 7880-7884
    • Trellakis, A.1
  • 9
    • 25144444725 scopus 로고    scopus 로고
    • "Surface mobility in silicon at large operating temperature"
    • S. Reggiani et al., "Surface mobility in silicon at large operating temperature," SISPAD 2002 Proceedings, 15-20 (2002).
    • (2002) SISPAD 2002 Proceedings , pp. 15-20
    • Reggiani, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.