Surface and orientation dependence on performance of trigated silicon nanowire pMOSFETs

2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009

Volumn , Issue , 2009, Pages 45-48

  Mehrotra, Saumitra ^a   Paul, Abhijeet ^a   Luisier, Mathieu ^a   Gerhard, Klimeck ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Anisotropy; Component; Holes; Injection velocity; Nanowire; P mos; Tight binding; Top of the barrier; Transistor; Valence bands

Indexed keywords

COMPONENT; HOLES; INJECTION-VELOCITY; P-MOS; TIGHT BINDING;

ANISOTROPY; ELECTRON DEVICES; MICROELECTRONICS; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; VALENCE BANDS;

MOSFET DEVICES;

EID: 67650101772     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WMED.2009.4816145     Document Type: Conference Paper

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