Roughness characterization in the frequency domain and LWR mitigation with post-litho processes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7639, Issue , 2010, Pages

  Vaglio Pret, Alessandro ^a   Gronheid, Roel ^a   Foubert, Philippe ^a  

^a IMEC   (Belgium)

Author keywords

3 LWR; frequency analysis; post litho process; smoothing techniques

Indexed keywords

ANALYSIS TECHNIQUES; CHEMICAL PROCESS; CRITICAL DIMENSION; DIFFERENT FREQUENCY; ETCHED PATTERNS; FREQUENCY ANALYSIS; FREQUENCY DOMAINS; ION-BEAM SPUTTERING; LINEWIDTH ROUGHNESS; LITHO PROCESS; LITHOGRAPHIC PROCESS; PLASMA TREATMENT; REDUCTION METHOD; SMOOTHING TECHNIQUES;

ROUGHNESS MEASUREMENT; SPUTTERING;

FREQUENCY DOMAIN ANALYSIS;

EID: 77953492679     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.848355     Document Type: Conference Paper

References (28)

1. Vaglio Pret A., Gronheid R., Vandeweyer T., Ishimoto T., "Line width roughness mitigation in chemically amplified resist by post-litho processes", Proc. Microelectonic Engineering (2010)
2. Wallow T., Acheta A., Yuansheng M., Pawloski A., Bell S., Ward B., Tabery C., La Fontaine B., Kim R., Levinson H.J., "Line edge roughness in 193nm resists : Lithographic aspects and etch transfer", Proc. SPIE vol. 6519 (2), pp. 651919.1-651919 (2007).
3. Patsis G. P., Constantoudis V., Tsikrikas N., Gogolides E., "Photoresist line-edge roughness analysis using scaling concepts", J. of Microlithography Microfabrication And Microsystems, pp. 429-435 (2004)
4. ITRS website, http://www.itrs.net/
5. Noordman O., Tychkov A., Baselmans J, Tsacoyeanes J., Politi G., Patra M., Blahnik V., Maul M.,"Speckle in optical lithography and the influence on line width roughness", Proc. SPIE, vol. 7274, pp. 72741R-72741R-12 (2009)
6. Gallatin G. M., Kita N., Ujike T., Partlo B., "Residual speckle in a lithographic illumination system", J. Micro/Nanolith. MEMS MOEMS, Vol. 8, 043003 (2009)
7. Naulleau P. P., Gallatin G. M., "Line-edge roughness transfer function and its application to determining mask effects in EUV resist characterization", Applied Optics, 2003, vol. 42, no17, pp. 3390-3397
8. Naulleau P. P., Gallatin G. M., "Spatial scaling metrics of mask-induced line-edge roughness", J. of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 26, Issue 6, pp. 1903 - 1910 (2008)
9. Pawloski, A. R. Acheta, A. Lalovic, I. La Fontaine, B. M. Levinson, H. J., "Characterization of line edge roughness in photoresist using an image fading technique", Proc. SPIE, Vol 5376, Part 1, pp. 414-425 (2004)
10. Rathsack B., Nafus K., Hatakeyama S., Kuwahara Y., Kitano J., Gronheid R., Vaglio Pret A., "Resist fundamentals for resolution, LER and sensitivity (RLS) performance tradeoffs and their relation to micro-bridging defects", Proc. SPIE, vol. 7273, pp. 727347 (2009)
11. Kozawa T., Tagawa S., Santillan J. J., Itani T., "Impact of Nonconstant Diffusion Coefficient on Latent Image Quality in 22 nm Fabrication using extreme Ultraviolet Lithography", J. of Photopolymer Science and Technology, vol. 21, no. 3 421-427 (2008)
12. Iwashita J., Mimura T., Hirayama T., Iwai T., "Main chain decomposable star shaped polymer for EUV resist", Proc. SPIE, vol. 7273, pp. 72733O-72733O-9 (2009).
13. Gronheid R., Rathsack B., Bernard S., Vaglio Pret A., Nafus K., Hatakeyama S., " Effect of PAG Distribution on ArF and EUV Resist Performance", J. of Photopolymer Science and Technology, vol. 22, no. 1 97-104 (2009)
14. C. A. Mack, "A Stochastic Model for Line Edge Roughness", www.lithoguru.com
15. Tsubaki H. Tsuchihashi T., Tsuchimura T, "Resolution and LWR improvements by acid diffusion control in EUV lithography", Proc SPIE, vol. 7273, pp. 72731K (2009)
16. Fedynyshyn T. H., Astolfi D. K., Cabral A., Roberts J., "PAG Segregation During Exposure Affecting Innate Material Roughness", Proc. SPIE, vol. 6519, pp. 65190X (2007)
17. Higgins C., Antohe A., Denbeaux G., Kruger S., Georger J., Brainard R., "RLS Tradeoff vs. Quantum Yield of High PAG EUV Resist", Proc. SPIE, vol. 7271, pp. 727147-727147-12 (2009).
18. Zhang P., Jaramillo M., Cassel S., Wallow T., Acheta A., Pawloski A. R., Bell S., Kim R. H., "Post-etch LER performance of novel surface conditioner solutions", Proc. SPIE, vol. 6153, pp. 61533Y (2006).
19. G. Beyer, S. Demuynck, M. Stucchi, I. Ciofi, Zs. Tökei: "The reliability margin of interconnects for advanced memory technologies", http://www.electroiq.com/index/display/article-display.articles. solid-state-technology.semiconductors.device-architecture.interconnects.2009.05. the-reliability-margin-of-interconnects-for-advanced-memory-technologies. QP129867.dcmp=rss.page=1.html
20. Yamaguchi A.,Steffen R., Kawada H., Iizumi T. and Sugimoto A., "From Speculation to Specification: A Discussion on How to Define the Tolerance of LER/LWR and its Measurement Methodology", Proc. SPIE Vol. 6152, 61524O, (2006)
21. Bunday B., Cordes A., Orji N. G., Piscani E., Cochran D., Byers J., Allgair J., Rice B., Avitan Y., Peltinov R., Bar-zvi M., Adan O., "Characterization of CD-SEM Metrology for iArF Photoresist Materials", Proc. SPIE, vol. 6922, 69221A (2008)
22. A.-L. Barabási, H. E. Stanley, "Fractal concepts in surface growth", Cambridge University Press, cap 2.2, 2.3, 2.4, 9.4, 12, 13, 14
23. Matsunaga K., Oori T., Kato H., Kawamura D., Shiobara E., Inatomi Y., Kawasaki T., Iwashita M. and Ito S., "LWR Reduction in low k1 ArF immersion lithography", Proc. SPIE, vol. 6923, pp. 69231E (2008)
24. Struck C. R. M., Raju R., Neumann M. J.,Ruzic D. N., "Reducing LER using a grazing incidence ion beam", Proc. SPIE, Vol. 7273, pp. 727346 (2009)
25. Chandhok M., Frasure, Putna E. S., Younkin T. R., Rachmady W., Shah U., Yueh W., "Improvement in linewidth roughness by postprocessing", J. Vac. Sci. Technol. B vol. 26, Issue 6, pp. 2265-2270 (2008)
26. Putna E. S., Younkin T. R., Chandhok M., Frasure K., "EUV Lithography for 30nm Half Pitch and Beyond: Exploring Resolution, Sensitivity and LWR Tradeoffs", Proc.SPIE, vol. 7273, pp. 72731L-72731L-9 (2009).
27. E. Pargon, K. Menguelti, M. Martin, A. Bazin, O. Chaix-Pluchery, C. Sourd, S. Derrough, T. Lill, and O. Joubert, "Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists", J. Appl. Phys. 105, pp. 094902 (2009)
28. Croon J. A., Storms G.., Winkelmeier, S., Pollentier I., Ercken M., Decoutere S., Sansen W., Maes H. E.: "Line Edge Roughness: Characterization, Modeling and Impact on Device Behavior, IEEE IEDM pp. 307-310 (2002)