메뉴 건너뛰기




Volumn 3, Issue 3, 2004, Pages 429-435

Photoresist line-edge roughness analysis using scaling concepts

Author keywords

Correlation length; Edge detection; Fractal dimension; Line edge roughness; Line width roughness; Noise smoothing filters; Photoresist; Roughness exponent; Scaling analysis; Scanning electron microscope images

Indexed keywords

ALGORITHMS; EDGE DETECTION; FRACTALS; MICROELECTRONICS; OSCILLATIONS; ROUGHNESS MEASUREMENT; SCANNING ELECTRON MICROSCOPY; SHRINKAGE; SPURIOUS SIGNAL NOISE;

EID: 5444237823     PISSN: 15371646     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.1759325     Document Type: Conference Paper
Times cited : (51)

References (13)
  • 2
    • 0036029137 scopus 로고    scopus 로고
    • Study of gate line edge roughness effects in 50 nm bulk MOSFET devices
    • S. Xiong, J. Bokor, Q. Xiang, P. Fisher, I. Dudley, and P. Rao, "Study of gate line edge roughness effects in 50 nm bulk MOSFET devices," Proc. SPIE 4689, 733-741 (2003).
    • (2003) Proc. SPIE , vol.4689 , pp. 733-741
    • Xiong, S.1    Bokor, J.2    Xiang, Q.3    Fisher, P.4    Dudley, I.5    Rao, P.6
  • 3
    • 0003161077 scopus 로고    scopus 로고
    • Analysis of statistical fluctuation due to line edge roughness in sub-0.1 μm MOSFETS
    • S. Kaya, A. R. Brown, A. Asenov, D. Magot, and T. Linton, "Analysis of statistical fluctuation due to line edge roughness in sub-0.1 μm MOSFETS," Proc. SISPAD, pp. 78-81 (2001).
    • (2001) Proc. SISPAD , pp. 78-81
    • Kaya, S.1    Brown, A.R.2    Asenov, A.3    Magot, D.4    Linton, T.5
  • 4
    • 0035450052 scopus 로고    scopus 로고
    • Metrology method for the correlation of line edge roughness for different resists before and after etch
    • S. Winkelmeier, M. Sarstedt, M. Ereken, M. Goethals, and K. Ronse, "Metrology method for the correlation of line edge roughness for different resists before and after etch," Microelectron. Eng. 57-58, 665-672 (2001).
    • (2001) Microelectron. Eng. , vol.57-58 , pp. 665-672
    • Winkelmeier, S.1    Sarstedt, M.2    Ereken, M.3    Goethals, M.4    Ronse, K.5
  • 6
    • 0038117768 scopus 로고    scopus 로고
    • Quantification of line-edge roughness of photoresists. Part I: A comparison between off-line and on-line analysis of top-down SEM images
    • G. P. Patsis, V. Constantoudis, A. Tserepi, and E. Gogolides, "Quantification of line-edge roughness of photoresists. Part I: A comparison between off-line and on-line analysis of top-down SEM images," J. Vac. Sci. Technol. B 21, 1008-1018 (2003).
    • (2003) J. Vac. Sci. Technol. B , vol.21 , pp. 1008-1018
    • Patsis, G.P.1    Constantoudis, V.2    Tserepi, A.3    Gogolides, E.4
  • 7
    • 0038457081 scopus 로고    scopus 로고
    • Quantification of line edge roughness of photoresists. Part II: Scaling and fractal analysis and the best roughness descriptors
    • V. Constantoudis, G. P. Patsis, A. Tserepi, and E. Gogolides, "Quantification of line edge roughness of photoresists. Part II: Scaling and fractal analysis and the best roughness descriptors," J. Vac. Sci. Technol. B 21, 1019-1026 (2003).
    • (2003) J. Vac. Sci. Technol. B , vol.21 , pp. 1019-1026
    • Constantoudis, V.1    Patsis, G.P.2    Tserepi, A.3    Gogolides, E.4
  • 8
    • 0033260747 scopus 로고    scopus 로고
    • Comparison of metrology methods for quantifying the line edge roughness of patterned features
    • C. Nelson, S. C. Palmateer, A. R. Forte, and T. M. Lyszczarz, "Comparison of metrology methods for quantifying the line edge roughness of patterned features," J. Vac. Sci. Technol. B 17(6), 2488-2498 (1999).
    • (1999) J. Vac. Sci. Technol. B , vol.17 , Issue.6 , pp. 2488-2498
    • Nelson, C.1    Palmateer, S.C.2    Forte, A.R.3    Lyszczarz, T.M.4
  • 9
    • 0037207710 scopus 로고    scopus 로고
    • Etching behaviour of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane
    • A. Tserepi, G. Cordoyiannis, G. P. Patsis, V. Constantoudis, and E. Gogolides, "Etching behaviour of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane," J. Vac. Sci. Technol. B 21, 174-182 (2003).
    • (2003) J. Vac. Sci. Technol. B , vol.21 , pp. 174-182
    • Tserepi, A.1    Cordoyiannis, G.2    Patsis, G.P.3    Constantoudis, V.4    Gogolides, E.5
  • 10
    • 0038359112 scopus 로고    scopus 로고
    • Roughness analysis of lithographically produced nanostructures: Off line measurement, scaling analysis and Monte Carlo simulations
    • G. P. Patsis, V. Constantoudis, A. Tserepi, and E. Gogolides, "Roughness analysis of lithographically produced nanostructures: off line measurement, scaling analysis and Monte Carlo simulations," Microelectron. Eng. 67-68, 319-325 (2003).
    • (2003) Microelectron. Eng. , vol.67-68 , pp. 319-325
    • Patsis, G.P.1    Constantoudis, V.2    Tserepi, A.3    Gogolides, E.4
  • 11
    • 0141621030 scopus 로고    scopus 로고
    • Characterization of amorphous and crystalline rough surface: Principles and applications
    • Academic Press, New York
    • B. Y. Zhao, G. C. Wang, and T. M. Lu, "Characterization of amorphous and crystalline rough surface: Principles and applications," Exp. Methods Phys. Sci. 37, Academic Press, New York (2001).
    • (2001) Exp. Methods Phys. Sci. , vol.37
    • Zhao, B.Y.1    Wang, G.C.2    Lu, T.M.3
  • 13
    • 0141499413 scopus 로고    scopus 로고
    • Spatial frequency analysis of line edge roughness in nine chemically related photoresists
    • W. G. Lawrence, "Spatial frequency analysis of line edge roughness in nine chemically related photoresists," Proc. SPIE 5039, 713-724 (2003).
    • (2003) Proc. SPIE , vol.5039 , pp. 713-724
    • Lawrence, W.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.