Effect of PAG distribution on ArF and EUV resist performance

Journal of Photopolymer Science and Technology

Volumn 22, Issue 1, 2009, Pages 97-104

  Gronheid, Roel ^a   Rathsack, Benjamen ^b   Bernard, Sophie ^a   Pret, Alessandro Vaglio ^a   Nafus, Kathleen ^c   Hatakeyama, Shinichi ^c  

^a IMEC   (Belgium)

^b TOKYO ELECTRON AMERICA INC   (United States)

^c TOKYO ELECTRON LTD   (Japan)

Author keywords

Chemically amplified resists; Line width roughness; Resolution; Sensitivity

Indexed keywords

EID: 70249115602     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.22.97     Document Type: Article

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