LWR reduction in low k1 ArF immersion lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6923, Issue , 2008, Pages

  Matsunaga, Kentaro ^a   Oori, Tomoya ^a   Kato, Hirokazu ^a   Kawamura, Daisuke ^a   Shiobara, Eishi ^a   Inatomi, Yuichiro ^b   Kawasaki, Tetsu ^b   Iwashita, Mitsuaki ^b   Ito, Shinichi ^a  

^a TOSHIBA CORPORATION   (Japan)

^b TOKYO ELECTRON LTD   (Japan)

Author keywords

ArF immersion resist; Line edge roughness; Line width roughness; Organic solvent; Smoothing process

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ETCHING; LIGHT WATER REACTORS; ORGANIC COMPOUNDS; ORGANIC SOLVENTS; PHOTOLITHOGRAPHY; PHOTORESISTS; SOLVENTS;

ARF IMMERSION LITHOGRAPHIES; ARF IMMERSION RESIST; BAKE PROCESSES; CRITICAL ISSUES; DEVELOPMENT PROCESSES; HARD MASK ETCHINGS; IMMERSION RESISTS; ISOLATED PATTERNS; LINE EDGE ROUGHNESS; LINE WIDTH ROUGHNESS; LINE WIDTHS; LITHOGRAPHY PROCESSES; REDUCTION EFFECTS; RESIST PATTERNS; SMOOTHING PROCESS; SMOOTHING PROCESSES; TRACK PROCESSES;

ROUGHNESS MEASUREMENT;

EID: 57349170826     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.771922     Document Type: Conference Paper

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