Characterization of CD-SEM metrology for iArF photoresist materials

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6922, Issue , 2008, Pages

  Bunday, Benjamin ^a   Cordes, Aaron ^a   Orji, N G ^b   Piscani, Emil ^a   Cochran, Dan ^a   Byers, Jeff ^a   Allgair, John ^c   Rice, Bryan J ^a   Avitan, Yohanan ^d   Peltinov, Ram ^d   Bar Zvi, Maayan ^d   Adan, Ofer ^d  

^a SEMATECH   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c ISMI   (United States)

^d Applied Materials Inc Israel   (Israel)

Author keywords

193 nm; ArF; CD SEM; iArF; Immersion; Metrology; Photoresist; Resist; Shrinkage

Indexed keywords

193 NM; ARF; CD-SEM; IARF; IMMERSION; RESIST;

ELECTRON BEAMS; LITHOGRAPHY; NANOTECHNOLOGY; PHOTORESISTS; PROCESS CONTROL; SCANNING ELECTRON MICROSCOPY; SENSITIVITY ANALYSIS; SHRINKAGE; UNITS OF MEASUREMENT;

MEASUREMENTS;

EID: 79959331120     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.774317     Document Type: Conference Paper

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