Improvement in NBTI reliability of Si-passivated Ge/high-k/metal-gate pFETs

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1582-1584

  Kaczer, B ^a   Franco, J ^a   Mitard, J ^a   Roussel, Ph J ^a   Veloso, A ^a   Groeseneken, G ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Germanium; High k dielectrics; Negative Bias Temperature Instability (NBTI); pFET

Indexed keywords

HIGH-K DIELECTRICS; INTERFACE STATE; NEGATIVE BIAS TEMPERATURE INSTABILITY; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); PASSIVATION LAYER; PFET; SILICON-BASED; TUNNELING BARRIER;

GERMANIUM; NEGATIVE TEMPERATURE COEFFICIENT; PASSIVATION; SILICON;

THERMODYNAMIC STABILITY;

EID: 67349119847     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.061     Document Type: Article

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