Intrinsic origin of electric dipoles formed at high-k/SiO2 interface

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Kita, Koji ^a   Toriumi, Akira ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AREAL DENSITIES; CORE-LEVEL SHIFTS; ELECTRIC DIPOLES; NEW MODELS; OXYGEN ATOMS; XPS MEASUREMENTS;

ELECTRON DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); OXYGEN;

MOS CAPACITORS;

EID: 64549117744     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796605     Document Type: Conference Paper

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