High mobility high-k/Ge pMOSFETs with 1 nm EOT-new concept on interface engineering and interface characterization

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Xie, Ruilong ^a,b   Phung, Thanh Hoa ^a   He, Wei ^a   Sun, Zhiqiang ^a   Yu, Mingbin ^b   Cheng, Zhiyuan ^c   Zhu, Chunxiang ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b AGENCY FOR SCIENCE   (Singapore)

^c AmberWave Systems Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CHARGE PUMPING; FALL TIME; GATE LEAKAGE CURRENT DENSITIES; GATE STACKS; HIGH MOBILITIES; INTERFACE CHARACTERIZATIONS; INTERFACE ENGINEERINGS; INTERFACE PROPERTIES; MINIMUM DENSITIES; NEW CONCEPTS; P-MOSFETS;

DRAIN CURRENT; ELECTRON DEVICES; FLUORINE; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HOLE MOBILITY; MOSFET DEVICES; PASSIVATION;

MOS CAPACITORS;

EID: 78650760700     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796703     Document Type: Conference Paper

References (9)

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