Energy distribution of interface traps in germanium metal-oxide- semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility

Applied Physics Letters

Volumn 93, Issue 8, 2008, Pages

  Xie, Ruilong ^a   Wu, Nan ^a   Shen, Chen ^a   Zhu, Chunxiang ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CAPACITANCE; CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC POWER DISTRIBUTION; ELECTRON MOBILITY; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HAFNIUM COMPOUNDS; ION BEAMS; MOS CAPACITORS; MOSFET DEVICES; SEMICONDUCTOR MATERIALS; TIME MEASUREMENT; TRANSISTORS;

ENERGY DISTRIBUTIONS; INTERFACE TRAPPING; METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 51549101644     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2976632     Document Type: Article

References (16)

1. H. Shang, H. Okorn-Schmidt, K. K. Chan, M. Copel, J. A. Ott, P. M. Kozlowski, S. E. Steen, S. A. Cordes, H. -S. P. Wong, E. C. Jones, and W. E. Haensch, Tech. Dig.-Int. Electron Devices Meet. 2002, 441.
2. N. Wu, Q. Zhang, C. Zhu, D. S. H. Chan, A. Du, N. Balasubramanian, M. F. Li, A. Chin, J. K. O. Sin, and D. -L. Kwong, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2004.833842 25, 631 (2004).
3. K. Saraswat, C. O. Chui, T. Krishnamohan, D. Kim, A. Nayfeh, and A. Pethe, Mater. Sci. Eng., B 0921-5107 10.1016/j.mseb.2006.08.014 135, 242 (2006).
4. S. Joshi, C. Krug, D. Heh, H. J. Na, H. R. Harris, J. W. Oh, P. D. Kirsch, P. Majhi, B. H. Lee, H. -H. Tseng, R. Jammy, J. C. Lee, and S. K. Banerjee, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2007.893274 28, 308 (2007).
5. P. Zimmerman, G. Nicholas, B. D. Jaeger, B. Kaczer, A. Stesmans, L. -Å. Ragnarsson, D. P. Brunco, F. E. Leys, M. Caymax, G. Winderickx, K. Opsomer, M. Meuris, and M. M. Heyns, Tech. Dig.-Int. Electron Devices Meet. 2006, 655.
6. N. Taoka, M. Harada, Y. Yamashita, T. Yamamoto, N. Sugiyama, and S. -I. Takagi, Appl. Phys. Lett. 0003-6951 10.1063/1.2899631 92, 113511 (2008).
7. R. Xie, M. Yu, M. Y. Lai, L. Chan, and C. Zhu, Appl. Phys. Lett. 0003-6951 10.1063/1.2913048 92, 163505 (2008).
8. T. Takahashi, T. Nishimura, L. Chen, S. Sakata, K. Kita, and A. Toriumi, Tech. Dig.-Int. Electron Devices Meet. 2007, 697.
9. H. Shang, K. -L. Lee, P. Kozlowski, C. D'Emic, I. Babich, E. Sikorski, M. Ieong, H. -S. P. Wong, K. Guarini, and W. Haensch, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2003.823060 25, 135 (2004).
10. Q. Zhang, J. Huang, N. Wu, G. Chen, M. Hong, L. K. Bera, and C. Zhu, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2006.880655 27, 728 (2006).
11. W. P. Bai, N. Lu, A. Ritenour, M. L. Lee, D. A. Antoniadis, and D. L. Kwong, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2006.870242 27, 175 (2006).
12. N. Wu, Q. Zhang, N. Balasubramanian, D. S. H. Chan, and C. Zhu, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2007.892358 54, 733 (2007).
13. K. Martens, B. D. Jaeger, R. Bonzom, J. V. Steenbergen, M. Meuris, G. Groeseneken, and H. Maes, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2006.873767 27, 405 (2006).
14. G. Groeseneken, H. Maes, N. Beltran, and R. F. De Keersmaecker, IEEE Trans. Electron Devices 0018-9383 10.1109/T-ED.1984.21472 31, 42 (1984).
15. N. Wu, Q. Zhang, C. Zhu, C. C. Yeo, S. J. Whang, D. S. H. Chan, M. F. Li, B. J. Cho, A. Chin, D. -L. Kwong, A. Y. Du, C. H. Tung, and N. Balasubramanian, Appl. Phys. Lett. 0003-6951 10.1063/1.1737057 84, 3741 (2004).
16. J. Reed, Z. Fan, G. B. Gao, A. Botchkarev, and H. Morkoc, Appl. Phys. Lett. 0003-6951 10.1063/1.111472 64, 2706 (1994).