A simple approach to optimizing ultra-thin SiON gate dielectrics independently for n- And p-MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 824-827

  Tsujikawa, Shimpei ^a   Umeda, Hiroshi ^a   Kawahara, Takaaki ^a   Kawasaki, Yoji ^a   Shiga, Katsuya ^a   Yamashita, Tomohiro ^a   Hayashi, Takashi ^a   Yugami, Jiro ^a   Ohno, Yoshikazu ^a   Yoneda, Masahiro ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; LEAKAGE CURRENTS; MOSFET DEVICES; SILICON COMPOUNDS; ULTRATHIN FILMS;

F-INCORPORATION TECHNIQUES; METAL GATE ELECTRODES; SHORT CHANNEL EFFECT;

GATE DIELECTRICS;

EID: 33847734325     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)

1. S. V. Hattangady et al., IEDM Tech. Dig. p. 495, 1996
2. S. Tsujikawa et al., Symp. on VLSI Tech., p. 202, 2002
3. D. Ishikawa et al., IEDM Tech. Dig., p. 869, 2002
4. D. Matsushita et al., Symp. on VLSI Tech., p. 172, 2004
5. N. Kimizuka et al., Symp. on VLSI Tech., p. 92, 2000
6. Z. Wang et al., IEEE EDL, vol. 21, no. 4, p. 170, 2000
7. C. Hobbs et al., Symp. on VLSI Tech., p. 9, 2003
8. C. T. Liu et al., IEEE EDL, vol. 18, no. 3, p. 105, 1997
9. T. Yamashita et al., Symp. on VLSI Tech., p. 136, 2004
10. T. Hori, IEEE TED, vol. 37, no. 9, p. 2058, 1990
11. C. H. Liu et al., IEDM Tech. Dig., p. 39.2.1, 2001
12. T. B. Hook et al., IEEE TED, vol. 48, no. 7, p. 1346, 2001
13. T. Sasaki et al., SSDM, p. 66, 2003
14. T. Aoyama et al., JAP, 77 (1), p. 417, 1995
15. A. Ghetti et al., IEDM Tech. Dig., p. 731, 1999