Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuits

IEEE Transactions on Electron Devices

Volumn 53, Issue 12, 2006, Pages 3001-3010

  Shen, Chen ^a,b   Yang, Tian ^b,c   Li, Míng Fu ^a,b,d   Wang, Xinpeng ^b   Foo, C E ^b   Samudra, Ganesh S ^b   Yeo, Yee Chia ^a,b,e   Kwong, Dim Lee ^a,f  

^a IEEE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c Agere Systems   (Singapore)

^d INSTITUTE OF MICROELECTRONICS   (Singapore)

^e AGENCY FOR SCIENCE   (Singapore)

^f The University of Texas at Austin   (United States)

Author keywords

CMOSFETs; Digital circuits; Reliability; Static random access memory (SRAM); Trapping

Indexed keywords

CHARGE DETRAPPING MODELS; CMOSFET DIGITAL SYSTEMS; DYNAMIC STRESS CONDITIONS;

CHARGE TRAPPING; CIRCUIT SIMULATION; DIGITAL CIRCUITS; GATE DIELECTRICS; HAFNIUM COMPOUNDS; RELIABILITY; STATIC RANDOM ACCESS STORAGE;

MOSFET DEVICES;

EID: 33947194861     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.885680     Document Type: Article

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