Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs

Microelectronic Engineering

Volumn 86, Issue 3, 2009, Pages 259-262

  Yoo, Ook Sang ^a,b   Oh, Jungwoo ^c   Min, Kyung Seok ^b,d   Kang, Chang Yong ^c   Lee, B H ^c   Lee, Kyong Taek ^b,e   Na, Min Ki ^a   Kwon, Hyuk Min ^a   Majhi, P ^c   Tseng, H H ^c   Jammy, Raj ^c   Wang, J S ^a   Lee, Hi Deok ^a,b  

^a Chungnam National University   (South Korea)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c SEMATECH   (United States)

^d Sungkyunkwan University   (South Korea)

^e Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Charge pumping; Ge pMOSFET; High mobility channel; Interface trap; NBTI

Indexed keywords

GERMANIUM; NEGATIVE TEMPERATURE COEFFICIENT; PUMPS; SELF ASSEMBLY; SILICON; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

CHARGE PUMPING; GE PMOSFET; HIGH MOBILITY CHANNEL; INTERFACE TRAP; NBTI;

MOSFET DEVICES;

EID: 59149102560     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.04.024     Document Type: Article

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