Characterization of the carrot defect in 4H-SiC epitaxial layers

Journal of Crystal Growth

Volumn 312, Issue 11, 2010, Pages 1828-1837

  Hassan, J ^a   Henry, A ^a   McNally, P J ^b   Bergman, J P ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b DUBLIN CITY UNIVERSITY   (Ireland)

Author keywords

A1. Carrot defect; A1. Epitaxial defects; A1. KOH etching; A1. Line defects; A1. Planar defects; A1. X ray topography

Indexed keywords

A1. CARROT DEFECT; CARROT DEFECTS; KOH ETCHING; LINE DEFECTS; PLANAR DEFECT; X-RAY TOPOGRAPHY;

DEFECT DENSITY; EPILAYERS; EPITAXIAL GROWTH; ETCHING; OPTICAL MICROSCOPY; SILICON CARBIDE; SURFACE DEFECTS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77951206971     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.02.037     Document Type: Article

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