Large diameter and long length growth of SiC single crystal

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 99-102

  Kato, T ^a   Ohno, T ^a   Hirose, F ^a   Oyanagi, N ^a   Nishizawa, S ^a   Arai, K ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Defect; Dislocation; Silicon carbide; Single crystal; Sublimation growth; X ray topography

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; SINGLE CRYSTALS; SUBLIMATION; SURFACE TOPOGRAPHY; X RAY ANALYSIS;

CRYSTAL ENLARGEMENT; SUBLIMATION GROWTH; X RAY TOPOGRAPHY;

SILICON CARBIDE;

EID: 8744226938     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.99     Document Type: Conference Paper

References (2)

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2. Y. Kitou, W. Bahng, T. Kato, S. Nishizawa and K. Arai: Mater. Sci. Forum Vol. 389-393 (2002), p. 83