SCOPUS 정보 검색 플랫폼

Volumn 911, Issue , 2006, Pages 157-162

Growth mechanism and dislocation characterization of silicon carbide epitaxial films

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; THERMODYNAMICS; THIN FILMS;

BASAL PLANE DISLOCATIONS (BPD); GAS FLOW RATE; SCREW DISLOCATION (SD); SILICON TETRACHLORIDE; THREADING EDGE DISLOCATIONS (TED);

SILICON CARBIDE;

EID: 33750371845 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-0911-b05-27 Document Type: Conference Paper

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.