Structure of the carrot defect in 4H-SiC epitaxial layers

Applied Physics Letters

Volumn 86, Issue 2, 2005, Pages

  Benamara, M ^a   Zhang, X ^a   Skowronski, M ^a   Ruterana, P ^b   Nouet, G ^b   Sumakeris, J J ^c   Paisley, M J ^c   O'Loughlin, M J ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b UNIVERSITÉ DE CAEN   (France)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ETCHING; HIGH RESOLUTION ELECTRON MICROSCOPY; HYDROGEN; IMAGE ANALYSIS; MOLECULAR BEAM EPITAXY; NATURAL FREQUENCIES; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY; VECTORS; X RAY ANALYSIS;

BURGERS VECTOR; DISPLACEMENT VECTORS; PRISMATIC STACKING FAULTS; X-RAY TOPOGRAPHY;

SILICON CARBIDE;

EID: 13544254395     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1849416     Document Type: Article

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