Source of surface morphological defects formed on 4H-SiC homoepitaxial films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 10 A, 2006, Pages 7625-7631

  Okada, Tatsuya ^a   Ochi, Kengo ^a   Kawahara, Hiroyuki ^a   Tomita, Takuro ^a   Matsuo, Shigeki ^a   Yamaguchi, Makoto ^b   Higashimine, Kouichi ^c   Kimoto, Tsunenobu ^d  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b Japan Society for the Promotion of Machine Industry   (Japan)

^c JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^d KYOTO UNIVERSITY   (Japan)

Author keywords

Homoepitaxial film; micro Raman spectroscopy; Sheared frank dislocation; Silicon carbide (SiC); Surface morphological defect; Transmission electron microscopy (TEM); Zirconia (ZrO2) inclusion

Indexed keywords

EPITAXIAL FILMS; RAMAN SPECTROSCOPY; SILICON CARBIDE; SURFACE MORPHOLOGY; TRANSMISSION ELECTRON MICROSCOPY; ZIRCONIA;

HOMOEPITAXIAL FILM; MICRO RAMAN SPECTROSCOPY; SHEARED FRANK DISLOCATION; SURFACE MORPHOLOGICAL DEFECT;

DEFECTS;

EID: 34547915260     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.7625     Document Type: Article

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