Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers

Materials Research Society Symposium - Proceedings

Volumn 483, Issue , 1997, Pages 285-294

  Neudeck, P G ^a   Huang, W ^a   Dudley, M ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); ELECTRIC BREAKDOWN OF SOLIDS; LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS;

SYNCHROTRON WHITE BEAM X RAY TOPOGRAPHY (SWBXT);

SOLID STATE RECTIFIERS;

EID: 0031344321     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-483-285     Document Type: Conference Paper

References (31)