Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching

Journal of Crystal Growth

Volumn 306, Issue 2, 2007, Pages 254-261

  Tsuchida, H ^a   Kamata, I ^a   Nagano, M ^a  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

A1. Characterization; A1. Line defects; A1. Planar defects; A3. Vapor phase epitaxy; B1. Silicon carbide; B2. Semiconducting materials

Indexed keywords

ETCHING; NUCLEATION; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; TOPOGRAPHY; VAPOR PHASE EPITAXY;

LINE DEFECTS; PLANAR DEFECTS; SYNCHROTRON REFLECTION; THREADING SCREW DISLOCATIONS (TSD); X-RAY TOPOGRAPHY;

DEFECTS;

EID: 34547702592     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.05.006     Document Type: Article

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