Structure of carrot defects in 4H-SiC epilayers

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 327-332

  Zhang, X ^a   Ha, S ^a   Benamara, M ^a   Skowronski, M ^a   Sumakeris, J J ^b   Ryu, S ^b   Paisley, M J ^b   O'Loughlin, M J ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

4H SiC; Carrot defects; Dislocations; EBIC; Epitaxy; P n diode; Stacking faults; TEM; X ray topography

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEFECTS; ELECTRIC BREAKDOWN; EPILAYERS; EPITAXIAL LAYERS; ETCHING; LEAKAGE CURRENTS; STACKING FAULTS; TOPOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY;

CARROT DEFECTS; CROSS-SECTIONAL TRANSMISSION X-RAY TOPOGRAPHY; HOMOEPITAXIAL LAYERS;

SILICON CARBIDE;

EID: 37849003779     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.327     Document Type: Conference Paper

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