Electronic driving force for stacking fault expansion in 4H SiC

Physical Review B - Condensed Matter and Materials Physics

Volumn 73, Issue 15, 2006, Pages

  Lambrecht, Walter R L ^a   Miao, M S ^a  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33645817946     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.73.155312     Document Type: Article

References (40)

1. J. P. Bergman, H. Lendenmann, P. Å. Nilsson, U. Lindefelt, and P. Skytt, in Silicon Carbide and Related Materials, Proceedings of the European Conference on Silicon Carbide and Related Materials, ECSCRM-2000 [Mater. Sci. Forum MSFOEP 0255-5476 353-3, 299 (2000)].
2. R. E. Stahlbush, J. B. Fedison, S. D. Arthur, L. B. Rowland, J. W. Kretchmer, and S. Wang, Mater. Sci. Forum MSFOEP 0255-5476 389, 427 (2002).
3. R. S. Okojie, M. Zhang, P. Pirouz, S. Tumakha, G. Jessen, and L. Brillson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1415347 79, 3056 (2001).
4. L. J. Brillson, S. Tumakha, G. H. Jessen, R. S. Okojie, M. Zhang, and P. Pirouz, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1512816 81, 2785 (2002).
5. J. Q. Liu, H. J. Chung, T. Kuhr, Q. Li, and M. Skowronski, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1463203 80, 2111 (2002).
6. M. S. Miao, S. Limpijumnong, and W. R. L. Lambrecht, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1427749 79, 4360 (2001).
7. H. P. Iwata, U. Lindefelt, S. Öberg, and P. R. Briddon, Mater. Sci. Forum MSFOEP 0255-5476 389-393, 529 (2002);
8. H. P. Iwata, U. Lindefelt, S. Öberg, and P. R. Briddon, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/14/48/310 14, 12733 (2002);
9. H. P. Iwata, U. Lindefelt, S. Öberg, and P. R. Briddon, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.033203 65, 033203 (2002);
10. H. P. Iwata, U. Lindefelt, S. Öberg, and P. R. Briddon, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.68.113202 68, 113202 (2003).
11. H. Iwata, U. Lindefelt, S. Öberg, and P. R. Briddon, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1534376 93, 1577 (2003).
12. H. Iwata, U. Lindefelt, S. Öberg, and P. R. Briddon, Microelectron. J. MICEB9 0026-2692 10.1016/S0026-2692(03)00027-2 34, 371 (2003);
13. H. P. Iwata, U. Lindefelt, S. Öberg, and P. R. Briddon, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.68.245309 68, 245309 (2003).
14. U. Lindefelt, H. Iwata, S. Öberg, and P. R. Briddon, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.67.155204 67, 155204 (2003).
15. P. Pirouz, M. Zhang, J-L. Demenet, and H. M. Hobgood, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/14/48/335 14, 12929 (2002);
16. P. Pirouz, M. Zhang, J-L. Demenet, and H. M. Hobgood, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1555255 93, 3279 (2003);
17. P. Pirouz, J. L. Demenet, and M. H. Hong, Philos. Mag. A PMAADG 0141-8610 10.1080/01418610110033939 81, 1207 (2001).
18. S. Ha, M. Skowronski, J. J. Sumakeris, M. J. Paisley, and M. K. Das, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.92.175504 92, 175504 (2004).
19. H. J. Chung, J. Q. Liu, and M. Skowronski, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1519961 81, 3759 (2002).
20. T. A. Kuhr, J. Q. Liu, H. J. Chung, M. Skowronski, and F. Szmulowicz, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1516250 92, 5863 (2002).
21. T. Miyanagi, H. Tsuchida, I. Kamata, T. Nakamura, R. Ishii, K. Nakayam, and Y. Sugawara, in Proceedings of International Conference on Silicon Carbide and Related Materials, 2005 [Mater. Sci. Forum MSFOEP 0255-5476 (to be published)].
22. P. K. Sitch, R. Jones, S. Öberg, and M. I. Heggie, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.52.4951 52, 4951 (1995).
23. A. T. Blumenau, C. J. Fall, R. Jones, S. Öberg, T. Frauenheim, and P. R. Briddon, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.68.174108 68, 174108 (2003);
24. A. T. Blumenau, C. J. Fall, R. Jones, M. I. Heggie, P. R. Briddon, T. Frauenheimn, and S. Oberg, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/14/48/312 14, 12749 (2002).
25. A. Galeckas, J. Linnros, and P. Pirouz, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1496498 81, 883 (2002).
26. M. S. Miao and W. R. L. Lambrecht, in Proceedings of International Conference on Silicon Carbide and Related Materials, 2005, edited by, R. P. Devaty,,, D. Larkins,, and, S. Saddow, [Mater. Sci. Forum MSFOEP 0255-5476 (to be published)].
27. M. Methfessel, M. van Schilfgaarde, and R. A. Casali, in Electronic Structure and Physical Properties of Solids, The Uses of the LMTO Method, edited by, Hugues Dreyssé,, Springer Lecture Notes, Workshop Mont Saint Odille, France, 1998 (Springer, Berlin, 2000), pp. 114-147.
28. E. Bott, M. Methfessel, W. Krabs, and P. C. Schmidt, J. Math. Phys. JMAPAQ 0022-2488 10.1063/1.532437 39, 3393 (1998).
29. S. Limpijumnong and W. R. L. Lambrecht, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.57.12017 57, 12017 (1998).
30. L. Hedin and B. I. Lundqvist, J. Phys. C JPSOAW 0022-3719 10.1088/0022-3719/4/14/022 4, 2064 (1971).
31. P. Hohenberg and W. Kohn, Phys. Rev. PRVBAK 0096-8269 10.1103/PhysRev.136.B864 136, B864 (1964);
32. W. Kohn and L. J. Sham, Phys. Rev. PRVAAH 0096-8250 10.1103/PhysRev.140. A1133 140, A1133 (1965).
33. M. E. Fisher and W. Selke, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.44.1502 44, 1502 (1980).
34. C. Cheng, R. J. Needs, V. Heine, and N. Churcher, Europhys. Lett. EULEEJ 0295-5075 3, 475 (1987).
35. W. R. L. Lambrecht and B. Segall, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.52.R2249 52, R2249 (1995).
36. A. Qteish, V. Heine, and R. J. Needs, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.45.6534 45, 6534 (1992);
37. A. Qteish, V. Heine, and R. J. Needs, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.45.6376 45, 6376 (1992).
38. M. S. Miao and W. R. L. Lambrecht, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.68.155320 68, 155320 (2003).
39. M. S. Miao and W. R. L. Lambrecht (unpublished).
40. Z. S. Popovic and S. Satpathy, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.94.176805 94, 176805 (2005).