Complete Micropipe Dissociation in 4H-SiC(033̄8) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 197-200

  Kimoto, T ^a   Danno, K ^a   Fujihira, K ^a   Shiomi, H ^b   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

^b SiXON Ltd   (Japan)

Author keywords

(033 8); Epitaxial Growth; Micropipe Closing; Schottky Barrier Diode

Indexed keywords

DISSOCIATION; EPITAXIAL GROWTH; SCHOTTKY BARRIER DIODES;

MICROPIPE DISSOCIATION;

SILICON CARBIDE;

EID: 0242665457     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.197     Document Type: Conference Paper

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