Effect of thermal annealing on Ga-doped ZnO films prepared by magnetron sputtering

Journal of the Electrochemical Society

Volumn 154, Issue 6, 2007, Pages

  Sheu, J K ^a   Shu, K W ^a   Lee, M L ^b   Tun, C J ^c   Chi, G C ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; FILM PREPARATION; GALLIUM; MAGNETRON SPUTTERING; ZINC OXIDE;

METALLIC CONDUCTIVITY; THERMAL ANNEALING;

OXIDE FILMS;

EID: 34547204181     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2721760     Document Type: Article

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