Dependences of structural and electrical properties on thickness of polycrystalline Ga-doped ZnO thin films prepared by reactive plasma deposition

Superlattices and Microstructures

Volumn 42, Issue 1-6, 2007, Pages 68-73

  Yamada, T ^a   Nebiki, T ^a   Kishimoto, S ^a   Makino, H ^a   Awai, K ^a   Narusawa, T ^a   Yamamoto, T ^a  

^a KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Ga doped ZnO; Low resistivity; Transparent conductive film; ZnO

Indexed keywords

CONDUCTIVE FILMS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GALLIUM; HIGH TEMPERATURE EFFECTS; PLASMA DEPOSITION; POLYCRYSTALLINE MATERIALS; ZINC OXIDE;

HEXAGONAL WURTZITE STRUCTURES; REACTIVE PLASMA DEPOSITION;

THIN FILMS;

EID: 34548512830     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2007.04.080     Document Type: Article

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