Growth and characterization of undoped ZnO films for single crystal based device use by radical source molecular beam epitaxy (RS-MBE)

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 923-928

  Nakahara, K ^a   Takasu, H ^a   Fons, P ^a   Iwata, K ^a   Yamada, A ^a   Matsubara, K ^a   Hunger, R ^a   Niki, S ^b  

^a ROHM CO LTD   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

A1. Crystal structure; A1. Reflection high energy electron diffraction; A1. Surface structure; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Zinc compounds

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRON MOBILITY; HIGH TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTING FILMS; SUBSTRATES; SURFACE STRUCTURE; X RAY CRYSTALLOGRAPHY;

RADICAL SOURCE MOLECULAR BEAM EPITAXY (RSMBE);

ZINC OXIDE;

EID: 4244150413     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00929-0     Document Type: Conference Paper

References (8)