Completely surface-potential-based compact model of the fully depleted SOI-MOSFET including short-channel effects

IEEE Transactions on Electron Devices

Volumn 53, Issue 9, 2006, Pages 2017-2023

  Sadachika, Norio ^b   Kitamaru, Daisuke ^b,c   Uetsuji, Yasuhito ^b,d   Navarro, Dondee ^b   Yusoff, Marmee Mohd ^b   Ezaki, Tatsuya ^b   Mattausch, Hans Jürgen ^a,b   Miura Mattausch, Mitiko ^a,b  

^a IEEE

^b HIROSHIMA UNIVERSITY   (Japan)

^c PANASONIC CORPORATION   (Japan)

^d OMRON CORPORATION   (Japan)

Author keywords

I f noise; Inverter; Iteration solution; Short channel effect (SCE); Surface potentials

Indexed keywords

CIRCUIT SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC INVERTERS; ITERATIVE METHODS; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; SURFACE POTENTIAL;

1/F NOISE CHARACTERISTICS; ITERATION SOLUTION; SHORT CHANNEL EFFECTS; SURFACE POTENTIAL CALCULATION;

MOSFET DEVICES;

EID: 33947123645     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.880366     Document Type: Article

References (19)

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