General analytical Poisson solution for undoped generic two-gated metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 90, Issue 1, 2007, Pages

  Shangguan, W Z ^a   Au Yeung, T C ^a   Zhu, Z M ^a   Zhou, X ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; APPROXIMATION THEORY; NUMERICAL METHODS; SILICON ON INSULATOR TECHNOLOGY;

ANALYTICAL POISSON SOLUTION; APPROXIMATE SOLUTION; SURFACE-POTENTIAL EQUATION;

MOSFET DEVICES;

EID: 33846105421     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2428414     Document Type: Article

References (15)

1. F. Balestra, S. Cristoloveanu, M. Benachir, J. Brini, and T. Elewa, IEEE Electron Device Lett. EDL-8, 410 (1987).
2. S. Y. Chou and Y. Wang, Appl. Phys. Lett. 63, 788 (1993).
3. K. Suzuki, T. Tanaka, Y. Tosaka, H. Horie, and Y. Arimoto, IEEE Trans. Electron Devices 40, 2326 (1993).
4. K. K. Young, IEEE Trans. Electron Devices 36, 504 (1989).
5. P. Francis, A. Terao, D. Flandre, and F. V. de Wiele, IEEE Trans. Electron Devices 41, 715 (1994).
6. K. Suzuki and T. Sugii, IEEE Trans. Electron Devices 42, 1940 (1995).
7. F. Gamiz and M. V. Fischetti, J. Appl. Phys. 89, 5478 (2001).
8. Y. Taur, IEEE Trans. Electron Devices 48, 2861 (2001).
9. L. Ge and J. G. Fossum, IEEE Trans. Electron Devices 49, 287 (2002).
10. X. Shi and M. Wong, IEEE Trans. Electron Devices 50, 1793 (2003).
11. Y. S. Yu, S. H. Kim, S. W. Hwang, and D. Ahn, IEE Proc.: Circuits Devices Syst. 152, 183 (2005).
12. A. S. Roy, J. M. Sallese, and C. C. Enz, Solid-State Electron. 50, 687 (2006).
13. J.-M. Sallese, F. Krummenacher, F. Pregaldiny, C. Lallement, A. Roy, and C. Enz, Solid-State Electron. 49, 485 (2005).
14. M. Wong and X. Shi, IEEE Trans. Electron Devices 53, 1389 (2006).
15. A. Ortiz-Conde, F. J. G. Sanchez, and M. Guzman, Solid-State Electron. 47, 2067 (2003).