Threshold voltage and bulk inversion effects in nonclassical CMOS devices with undoped ultra-thin bodies

Solid-State Electronics

Volumn 51, Issue 1, 2007, Pages 170-178

  Trivedi, Vishal P ^a   Fossum, Jerry G ^b   Zhang, Weimin ^b  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b University of Florida   (United States)

Author keywords

Charge coupling; Double gate MOSFETs; FinFETs; Fully depleted SOI MOSFETs; Threshold voltage; Ultra thin bodies; Volume inversion

Indexed keywords

ELECTRIC CHARGE; MOSFET DEVICES; RANDOM PROCESSES; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS; THRESHOLD VOLTAGE;

CHARGE COUPLING; DOUBLE GATE MOSFET; FINFET; FULLY DEPLETED SOI MOSFET; ULTRA THIN BODIES; VOLUME INVERSION;

CMOS INTEGRATED CIRCUITS;

EID: 33846826993     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.10.014     Document Type: Article

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