Physical basis and limitation of universal mobility behavior in fully depleted silicon-on-insulator Si inversion layers

Journal of Applied Physics

Volumn 81, Issue 2, 1997, Pages 786-794

  Shoji, Masanari ^a   Omura, Yasuhisa ^b   Tomizawa, Masaaki ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041161108     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364141     Document Type: Article

References (15)

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