High-brightness 2.X μm semiconductor lasers

NATO Science for Peace and Security Series B: Physics and Biophysics

Volumn , Issue , 2008, Pages 193-224

  Rattunde, Marcel ^a   Kelemen, M T ^a   Schulz, N ^a   Pfahler, C ^a   Manz, C ^a   Schmitz, J ^a   Kaufel, G ^a   Wagner, J ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

2 m; GaSb; High brightness; High power; Optically pumped semiconductor disk laser; Semiconductor diode laser; Tapered diode laser; VECSEL

Indexed keywords

EID: 77949427727     PISSN: 18746500     EISSN: None     Source Type: Book Series    
DOI: 10.1007/978-1-4020-6463-0_6     Document Type: Article

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