2.7-3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers

Applied Physics Letters

Volumn 64, Issue 19, 1994, Pages 2480-2482

  Baranov, A N ^a   Imenkov, A N ^b   Sherstnev, V V ^b   Yakovlev, Yu P ^b  

^a CNRS   (France)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CLADDING (COATING); ELECTRIC CURRENTS; ENERGY GAP; EPITAXIAL GROWTH; LASER MODES; SEMICONDUCTING INDIUM COMPOUNDS;

BAND ABSORPTION; BLUE SHIFT; CARRIER DENSITY; DOUBLE HETEROSTRUCTURE DIODE LASERS; LASING; LIQUID PHASE EPITAXY; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0028769182     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.111603     Document Type: Article

References (11)