GaSb-based tapered diode lasers at 1.93 μm with 1.5-W nearly diffraction-limited power

IEEE Photonics Technology Letters

Volumn 18, Issue 6, 2006, Pages 758-760

  Pfahler, Christian ^a   Kaufel, Gudrun ^a   Kelemen, Márc T ^a   Mikulla, Michael ^a   Rattunde, Marcel ^a   Schmitz, Johannes ^a   Wagner, Joachim ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

AlGaAsSb; GaInAsSb; GaSb; High brightness; Midinfrared; Molecular beam epitaxy; Semiconductor laser; Tapered laser

Indexed keywords

DIFFRACTION; HIGH POWER LASERS; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM COMPOUNDS;

DIFFRACTION-LIMITED POWER; HIGH BRIGHTNESS; TAPERED DIODE LASERS;

SEMICONDUCTOR LASERS;

EID: 33644639882     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.871679     Document Type: Article

References (16)

1. 2+: CdMnTe," Opt. Lett., vol. 27, no. 12, pp. 1034-1036, 2002.
2. M. Eichhorn, "Numerical modeling of Tm-doped double-clad fluride fiber amplifiers," IEEE J. Quantum Electron., vol. 41, no. 12, pp. 1574-1581, Dec. 2005.
3. N. Schulz, M. Rattunde, C. Manz, K. Köhler, C. Wild, J. Wagner, S. S. Beyertt, U. Brauch, T. Kübler, and A. Giesen, "High power continuous wave operation of a GaSb-based VECSEL emitting near 2.3 μm," Phys. Stat. Sol. (c), to be published.
4. H. K. Choi, G. W. Turner, M. K. Connors, S. Fox, C. Dauga, and M. Dagenais, "High-power, high-temperature operation of GaInAsSb-Al-GaAsSb ridge-waveguide lasers emitting at 1.9 μm," IEEE Photon. Technol. Lett., vol. 7, no. 3, pp. 281-283, Mar. 1995.
5. D. Garbuzov, R. Menna, M. Maiorov, H. Lee, V. Khalfin, L. DiMarco, D. Capewell, R. Martinelli, G. Belenky, and J. Conolly, "2.3-2.7 μm room temperature CW-operation of InGaAsSb/AlGaAsSb broad-contact and single-mode ridge-waveguide SCH-QW diode lasers," Proc. SPIE, vol. 3628, pp. 124-129, 1999.
6. M. Rattunde, E. Geerlings, A. Hülsmann, J. Schmitz, G. Kaufel, and J. Wagner, "Low-threshold, low beam divergence GaSb-based quantumwell diode lasers emitting in the 1.9 to 2.4 μm wavelength range," in Proc. CLEO Eur., Munich, Germany, 2005, to be published.
7. D. Z. Garbuzov, R. U. Martinelli, H. Lee, R. J. Menna, P. K. York, L. A. DiMarco, M. G. Harvey, R. J. Matarese, S.Y. Narayan, and J. C. Conolly, "4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/In-GaAsSb single-quantum-well broadened waveguide laser diodes," Appl. Phys. Lett., vol. 70, no. 22, pp. 2931-2933, 1997.
8. M. Rattunde, J. Schmitz, R. Kiefer, and J. Wagner, "Comprehensive analysis of internal losses in 2.0 μm (AlGaIn)(AsSb) quantum-well diode lasers," Appl. Phys. Lett., vol. 84, no. 23, pp. 4750-4752, 2004.
9. M. Rattunde, E. Geerlings, J. Schmitz, G. Kaufel, J.Weber,M.Mikulla, and J. Wagner, "GaSb-based 1.9-2.4 μm quantum-well diode lasers diodes with low beam divergence," Proc. SPIE, vol. 5738, pp. 138-145, 2005.
10. J. N. Walpole, "Semiconductor amplifiers and lasers with tapered gain regions," Opt. Quantum Electron., vol. 28, pp. 623-645, 1996.
11. H. K. Choi, J. N. Walpole, G. W. Turner, S. J. Eglash, L. J. Missaggia, and M. K. Connors, "GaInAsSb-AlGaAsSb tapered lasers emitting at 2 μm," IEEE Photon. Technol. Lett., vol. 5, no. 10, pp. 1117-1119, Oct. 1993.
12. H. K. Choi, J. N.Walpole, G.W. Turner,M. K. Connors, L. J. Missaggia, and M. J. Manfra, "GaInAsSb-AlGaAsSb tapered lasers emitting at 2.05 μm with 0.6-W diffraction-limited power," IEEE Photon. Technol. Lett., vol. 10, no. 7, pp. 938-940, Jul. 1998.
13. C. Lin, M. Grau, O. Dier, and M. C. Amann, "Low threshold roomtemperature continuous-wave operation of 2.24-3.04 μm GaInAsSb/ Al-GaAsSb quantum-well lasers," Appl. Phys. Lett., vol. 84, no. 25, pp.5088-5090, 2004.
14. M. Garcia, A. Salhi, A. Perona,Y. Rouillard, C. Sirtori, X. Marcadet, and C. Alibert, "Low threshold high-power room-temperature continuouswave operation diode laser emitting at 2.26 μm," IEEE Photon. Technol. Lett., vol. 16, no. 5, pp. 1253-1255, May 2004.
15. M. T. Kelemen, J.Weber,M. Rattunde, G. Kaufel, J. Schmitz, R. Moritz, M. Mikulla, and J.Wagner, "High-power 1.9 μm diode laser arrays with reduced far-field angle," IEEE Photon. Technol. Lett., vol. 18, no. 4, pp.628-630, Feb. 15, 2006.
16. M. T. Kelemen, J. Weber, G. Kaufel, G. Bihlmann, R. Moritz, M. Mikulla, and G. Weimann, "Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power," Electron. Lett., vol. 41, no. 18, pp. 1011-1013, 2005.